Confinement of light near the diffraction limit at the SiO<inf>2</inf>/Si interface by silica spheres

Abstract:

Silica spheres with diameters of about 1, 2 and 5νm were deposited on thermally grown SiO2/Si structures, which formed monolayers of spheres with long range ordering. Raman measurements were performed on these structures in backscattering mode using linearly polarized laser light with a wavelength of 532nm to determine the Stokes shift enhancement of the optical mode of Si. By combining finite-difference time-domain calculations for cylindrically shaped dielectrics and the Raman results it was possible to determine the distance of the caustic from the shadow side of the spheres. The enhancement of the electromagnetic fields correlates well with the enhancement of the Raman signal (∼103-104 at the shadow side of the spheres). © 2010 IOP Publishing Ltd.

Año de publicación:

2010

Keywords:

• Raman
• Light
• Confinement
• silicon

Fuente:

scopus