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Atomic imaging and spectroscopy of two-dimensional materials
Conference ObjectAbstract:Palabras claves:Autores:Idrobo J.C., Kapetanakis M., Leonardo Basile, Pantelides S.T., Pennycook S.J., Prange M.P., Zhou W.Fuentes:googlescopusControllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
ArticleAbstract: Layered materials are an actively pursued area of research for realizing highly scaled technologiesPalabras claves:Mo, molecular beam epitaxy (MBE), TeAutores:Azcatl A., Furdyna J., Idrobo J.C., Jena D., Kim M., Leonardo Basile, Liu X., Lu N., Magno K., Rouvimov S., Vishwanath S., Wallace R., Xing H.Fuentes:googlescopusEngineering single-atom dynamics with electron irradiation
ArticleAbstract: Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atomPalabras claves:Autores:Dong M., Hofer C., Idrobo J.C., Kong J., Kotakoski J., Leonardo Basile, Li J., Meyer J.C., Su C., Su G., Susi T., Tripathi M., Wang H., Wang Z., Yan Q.B., Zhang Z.Fuentes:googlescopusMonochromatic STEM-EELS for correlating the atomic structure and optical properties of two-dimensional materials
Conference ObjectAbstract:Palabras claves:Autores:Aoki T., Carpenter R., Dellby N., Idrobo J.C., Krivanek O.L., Leonardo Basile, Mardinly J., Pennycook S.J., Salafranca J., Zhou W.Fuentes:googlescopusHeteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges
ArticleAbstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-lPalabras claves:Autores:Clark K., Deng W., Gu G., Idrobo J.C., Leonardo Basile, Li A.P., Liu L., McCarty K., Park J., Siegel D.Fuentes:googlescopusLow-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations
ArticleAbstract: The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determiPalabras claves:first-principles calculations, low-frequency Raman spectroscopy, stacking configurations, Transition metal dichalcogenides, two-dimensional materialsAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Liang L., Mahjouri-Samani M., Meunier V., Puretzky A.A., Sumpter B.G., Wang K., Xiao K.Fuentes:googlescopusImaging and spectroscopy of graphene/hexagonal boron nitride lateral heterostructure interfaces
Conference ObjectAbstract:Palabras claves:Autores:Gu G., Idrobo J.C., Leonardo Basile, Liu L.Fuentes:googlescopusPersistent photoconductivity in two-dimensional Mo<inf>1-x</inf>W<inf>x</inf>Se<inf>2</inf>-MoSe<inf>2</inf> van der Waals heterojunctions
ArticleAbstract: Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers oPalabras claves:crystal, Optoelectronic, photoconductivityAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:scopusIsoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation
ArticleAbstract:Palabras claves:alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctionsAutores:Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:googlescopusUltrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
ArticleAbstract: We demonstrate the strategies and principles for the performance improvement of layered semiconductoPalabras claves:Autores:Cao W., Feng W., Hu P.A., Idrobo J.C., Leonardo Basile, Li X., Tan P.H., Tian W., Wu J.B., Xiao K., Yang B., Zheng W., Zhou X.Fuentes:googlescopus