Documentos de Idrobo J.C. | REDI

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Mostrando 9 resultados de: 9

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Área temáticas: "Ingeniería y operaciones afines"

Subtipo de publicación

Conference Object(3)

Publisher

Microscopy and Microanalysis(3)

Journal of Materials Research(2)

Advanced Materials(1)

Área temáticas

Física aplicada(6)

Cristalografía(4)

Física moderna(3)

Química y ciencias afines(2)

Área de conocimiento

Ciencia de materiales(9)

Nanostructura(4)

Semiconductor(1)

Año de Publicación

Origen

Palabras Claves

Chemical vapor deposition(1)

Mo W Se 1- x x 2(1)

Atomic imaging and spectroscopy of two-dimensional materials

Conference Object

Palabras claves:

Idrobo J.C., Kapetanakis M., Leonardo Basile, Pantelides S.T., Pennycook S.J., Prange M.P., Zhou W.

Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

Abstract: Layered materials are an actively pursued area of research for realizing highly scaled technologies

Palabras claves:

Mo, molecular beam epitaxy (MBE), Te

Azcatl A., Furdyna J., Idrobo J.C., Jena D., Kim M., Leonardo Basile, Liu X., Lu N., Magno K., Rouvimov S., Vishwanath S., Wallace R., Xing H.

Engineering single-atom dynamics with electron irradiation

Abstract: Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atom

Palabras claves:

Dong M., Hofer C., Idrobo J.C., Kong J., Kotakoski J., Leonardo Basile, Li J., Meyer J.C., Su C., Su G., Susi T., Tripathi M., Wang H., Wang Z., Yan Q.B., Zhang Z.

Monochromatic STEM-EELS for correlating the atomic structure and optical properties of two-dimensional materials

Conference Object

Palabras claves:

Aoki T., Carpenter R., Dellby N., Idrobo J.C., Krivanek O.L., Leonardo Basile, Mardinly J., Pennycook S.J., Salafranca J., Zhou W.

Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges

Abstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-l

Palabras claves:

Clark K., Deng W., Gu G., Idrobo J.C., Leonardo Basile, Li A.P., Liu L., McCarty K., Park J., Siegel D.

Imaging and spectroscopy of graphene/hexagonal boron nitride lateral heterostructure interfaces

Conference Object

Palabras claves:

Gu G., Idrobo J.C., Leonardo Basile, Liu L.

Persistent photoconductivity in two-dimensional Mo<inf>1-x</inf>W<inf>x</inf>Se<inf>2</inf>-MoSe<inf>2</inf> van der Waals heterojunctions

Abstract: Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers o

Palabras claves:

crystal, Optoelectronic, photoconductivity

Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.

Isoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation

Palabras claves:

alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctions

Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.

Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene

Abstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured ma

Palabras claves:

Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxy

Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.