Documentos de Idrobo J.C. | REDI

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Conference Object(3)

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Microscopy and Microanalysis(3)

Angewandte Chemie - International Edition(2)

Advanced Materials(1)

Journal of Materials Chemistry C(1)

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Ingeniería y operaciones afines(8)

Física aplicada(7)

Cristalografía(4)

Química inorgánica(4)

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Ciencia de materiales(11)

Nanostructura(6)

Fotovoltaica(1)

Ingeniería química(1)

Síntesis química(1)

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Palabras Claves

Chemical vapor deposition(1)

C−H Activation(1)

Gallium selenide(1)

Atomic imaging and spectroscopy of two-dimensional materials

Conference Object

Palabras claves:

Idrobo J.C., Kapetanakis M., Leonardo Basile, Pantelides S.T., Pennycook S.J., Prange M.P., Zhou W.

Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

Abstract: Layered materials are an actively pursued area of research for realizing highly scaled technologies

Palabras claves:

Mo, molecular beam epitaxy (MBE), Te

Azcatl A., Furdyna J., Idrobo J.C., Jena D., Kim M., Leonardo Basile, Liu X., Lu N., Magno K., Rouvimov S., Vishwanath S., Wallace R., Xing H.

Engineering single-atom dynamics with electron irradiation

Abstract: Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atom

Palabras claves:

Dong M., Hofer C., Idrobo J.C., Kong J., Kotakoski J., Leonardo Basile, Li J., Meyer J.C., Su C., Su G., Susi T., Tripathi M., Wang H., Wang Z., Yan Q.B., Zhang Z.

Monochromatic STEM-EELS for correlating the atomic structure and optical properties of two-dimensional materials

Conference Object

Palabras claves:

Aoki T., Carpenter R., Dellby N., Idrobo J.C., Krivanek O.L., Leonardo Basile, Mardinly J., Pennycook S.J., Salafranca J., Zhou W.

Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges

Abstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-l

Palabras claves:

Clark K., Deng W., Gu G., Idrobo J.C., Leonardo Basile, Li A.P., Liu L., McCarty K., Park J., Siegel D.

Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations

Abstract: The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determi

Palabras claves:

first-principles calculations, low-frequency Raman spectroscopy, stacking configurations, Transition metal dichalcogenides, two-dimensional materials

Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Liang L., Mahjouri-Samani M., Meunier V., Puretzky A.A., Sumpter B.G., Wang K., Xiao K.

Imaging and spectroscopy of graphene/hexagonal boron nitride lateral heterostructure interfaces

Conference Object

Palabras claves:

Gu G., Idrobo J.C., Leonardo Basile, Liu L.

Isoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation

Palabras claves:

alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctions

Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.

Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

Abstract: We demonstrate the strategies and principles for the performance improvement of layered semiconducto

Palabras claves:

Cao W., Feng W., Hu P.A., Idrobo J.C., Leonardo Basile, Li X., Tan P.H., Tian W., Wu J.B., Xiao K., Yang B., Zheng W., Zhou X.

Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene

Abstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured ma

Palabras claves:

Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxy

Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.