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Article(7)
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ACS Nano(2)
Advanced Materials(1)
Angewandte Chemie - International Edition(1)
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Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations
ArticleAbstract: The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determiPalabras claves:first-principles calculations, low-frequency Raman spectroscopy, stacking configurations, Transition metal dichalcogenides, two-dimensional materialsAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Liang L., Mahjouri-Samani M., Meunier V., Puretzky A.A., Sumpter B.G., Wang K., Xiao K.Fuentes:googlescopusPatterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
ArticleAbstract: The formation of semiconductor heterojunctions and their high-density integration are foundations ofPalabras claves:Autores:Boulesbaa A., Geohegan D.B., Ivanov I.N., Lee J., Leonardo Basile, Lin M.W., Lupini A.R., Mahjouri-Samani M., Puretzky A.A., Rouleau C.M., Wang K., Xiao K., Yoon M.Fuentes:googlescopusPersistent photoconductivity in two-dimensional Mo<inf>1-x</inf>W<inf>x</inf>Se<inf>2</inf>-MoSe<inf>2</inf> van der Waals heterojunctions
ArticleAbstract: Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers oPalabras claves:crystal, Optoelectronic, photoconductivityAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:scopusIsoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation
ArticleAbstract:Palabras claves:alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctionsAutores:Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:googlescopusUltrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
ArticleAbstract: We demonstrate the strategies and principles for the performance improvement of layered semiconductoPalabras claves:Autores:Cao W., Feng W., Hu P.A., Idrobo J.C., Leonardo Basile, Li X., Tan P.H., Tian W., Wu J.B., Xiao K., Yang B., Zheng W., Zhou X.Fuentes:googlescopusVan der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene
ArticleAbstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured maPalabras claves:Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxyAutores:Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.Fuentes:googlescopusRevealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals
ArticleAbstract: Characterizing and controlling the interlayer orientations and stacking orders of two-dimensional (2Palabras claves:Gallium selenide, Interlayer orientation, Monolayers, Stacking, Vapor-phase depositionAutores:Chi M., Geohegan D.B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Ma C., Puretzky A.A., Rouleau C.M., Xiao K., Yoon M.Fuentes:googlescopus