Mostrando 10 resultados de: 14
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Progress in Photovoltaics: Research and Applications(4)
Solar Energy Materials and Solar Cells(4)
ACS Applied Energy Materials(2)
ACS Applied Materials and Interfaces(2)
IEEE Journal of Photovoltaics(1)
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scopus(14)
Copper-Plating Metallization with Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contacts
ArticleAbstract: In this article, we develop in parallel two fabrication methods for copper (Cu) electroplated contacPalabras claves:Photovoltaic (PV), Photovoltaic cells, PV process control, Si PV device fabricationAutores:De Groot Y., Isabella O., Limodio G., Mazzarella L., Paul Procel, Van Kuler G., Yang G., Zeman M., Zhao Y.Fuentes:scopusDesign and optimization of hole collectors based on nc-SiO<inf>x</inf>:H for high-efficiency silicon heterojunction solar cells
ArticleAbstract: Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effectivePalabras claves:Activation energy (E ) a, Contact resistivity (ρ ) c, Hydrogenated nanocrystalline silicon oxide (nc-SiO :H) x, Interface treatment, optoelectrical properties, Silicon heterojunction (SHJ)Autores:Han C., Isabella O., Mazzarella L., Paul Procel, Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusErratum: High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells (ACS Appl. Mater. Interfaces (2019) 11:49 (45586−45595) DOI: 10.1021/acsami.9b14709)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusErratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO<inf>x</inf>/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusDoped hydrogenated nanocrystalline silicon oxide layers for high-efficiency c-Si heterojunction solar cells
ArticleAbstract: Hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) layers exhibit promising optoelectrical propePalabras claves:carrier-selective-contacts (CSCs), Hydrogenated nanocrystalline silicon oxide (nc-SiO :H) x, interface treatments, optoelectrical properties, Silicon heterojunction (SHJ)Autores:Han C., Isabella O., Mazzarella L., Paul Procel, Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusEffective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer
ArticleAbstract: Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceePalabras claves:Black silicon, conformal growth, hydrogenated amorphous silicon, plasma-enhanced chemical vapor deposition, surface passivationAutores:Isabella O., Mazzarella L., Medlin R., Özkol E., Paul Procel, Šutta P., Zeman M., Zhao Y.Fuentes:scopusHigh-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells
ArticleAbstract: Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to furtPalabras claves:electron mobility, hydrogenated fluorine-doped indium oxide (IFO:H), passivating contacts, Silicon heterojunction (SHJ), transparent conductive oxide (TCO)Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusUltra-thin electron collectors based on nc-Si:H for high-efficiency silicon heterojunction solar cells
ArticleAbstract: Low parasitic absorption and high conductivity enable (n)-type hydrogenated nanocrystalline siliconPalabras claves:(n)-type window layers, hydrogenated nanocrystalline silicon, hydrogenated nanocrystalline silicon oxide, opto-electrical properties, ultra-thin (n)-contactAutores:Han C., Isabella O., Mazzarella L., Paul Procel, Tichelaar F.D., Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusWill SiO<inf>x</inf>-pinholes for SiO<inf>x</inf>/poly-Si passivating contact enhance the passivation quality?
ArticleAbstract: Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to tPalabras claves:Enhanced passivation, Pinhole density, Poly-Si passivating Contacts, Thermal diffusion budgetAutores:Gram R., Han C., Isabella O., Mazzarella L., Paul Procel, Singh M., Yang G., Yao Z., Zeman M., Zhao Y.Fuentes:scopusRealizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO <inf>x</inf>/Poly-Si Passivating Contacts
ArticleAbstract: In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultPalabras claves:carrier-selective passivating contacts, hydrogen annealing, hydrogenated fluorine-doped indium oxide (IFO:H), transparent conductive oxide (TCO), ultrathin SiO /poly-Si passivating contacts xAutores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopus