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Solar Energy Materials and Solar Cells(2)
ACS Applied Energy Materials(1)
ACS Applied Materials and Interfaces(1)
Progress in Photovoltaics: Research and Applications(1)
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scopus(5)
Design and optimization of hole collectors based on nc-SiO<inf>x</inf>:H for high-efficiency silicon heterojunction solar cells
ArticleAbstract: Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effectivePalabras claves:Activation energy (E ) a, Contact resistivity (ρ ) c, Hydrogenated nanocrystalline silicon oxide (nc-SiO :H) x, Interface treatment, optoelectrical properties, Silicon heterojunction (SHJ)Autores:Han C., Isabella O., Mazzarella L., Paul Procel, Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusErratum: High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells (ACS Appl. Mater. Interfaces (2019) 11:49 (45586−45595) DOI: 10.1021/acsami.9b14709)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusErratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO<inf>x</inf>/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusRoom-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells
ArticleAbstract: The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and bPalabras claves:Improved near-infrared response, Room temperature transparent electrode, Silicon heterojunction solar cell, Tungsten-doped indium oxideAutores:Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Santbergen R., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusStrategy to mitigate the dipole interfacial states in (i)a-Si:H/MoO<inf>x</inf> passivating contacts solar cells
ArticleAbstract: Molybdenum oxide (MoOx) is attractive for applications as hole-selective contact in silicon heterojuPalabras claves:(i)a-Si:H/MoO hole transport contact x, interfacial dipole layer, plasma treatment, TCAD electrical modelingAutores:Alcañiz A., Han C., Isabella O., Kawa E., Mazzarella L., Paul Procel, Taheri P., Tiringer U., Yang G., Zeman M., Zhao Y.Fuentes:scopus