Innovative patterning method for modifying few-layer MoS<inf>2</inf> device geometries

Conference Object

Abstract: When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their

Palabras claves:

2d materials, PEBGAP, sulfur vacancies, μRaman

Autores:

Bernardo-Gavito R., Black A., Granados D., Jiménez Urbanos F., Osorio M.R., Santiago Casado

Fuentes:

google

scopus