Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

Conference Object

Abstract: The influence of various channel materials and crystallographic orientations on the performance of n

Palabras claves:

Autores:

Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.

Fuentes:

scopus