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Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

Abstract:

The influence of various channel materials and crystallographic orientations on the performance of nanowire MOSFETs operating in pure ballistic regime is investigated using 3D quantum-mechanical simulations. We consider three different materials (Si, Ge, GaAs) in nanowire transistors fabricated on a 〈010〉-wafer with an arbitrary channel orientation and provide a better understanding of the transport phenomena that may occur in each device configuration. © 2005 IEEE.

Año de publicación:

2005

Keywords:

    Fuente:

    scopusscopus

    Tipo de documento:

    Conference Object

    Estado:

    Acceso restringido

    Áreas de conocimiento:

    • Ingeniería electrónica
    • Ciencia de materiales
    • Semiconductor

    Áreas temáticas:

    • Física aplicada

    Contribuidores:

    Asenov A.Asenov A.
    Cavassilas N.Cavassilas N.
    Laurent RaymondLaurent Raymond
    Lannoo M.Lannoo M.
    Kalna K.Kalna K.
    Autran J.L.Autran J.L.
    Nehari K.Nehari K.
    Bescond M.Bescond M.