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Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations
ArticleAbstract: The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determiPalabras claves:first-principles calculations, low-frequency Raman spectroscopy, stacking configurations, Transition metal dichalcogenides, two-dimensional materialsAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Liang L., Mahjouri-Samani M., Meunier V., Puretzky A.A., Sumpter B.G., Wang K., Xiao K.Fuentes:googlescopusPatterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
ArticleAbstract: The formation of semiconductor heterojunctions and their high-density integration are foundations ofPalabras claves:Autores:Boulesbaa A., Geohegan D.B., Ivanov I.N., Lee J., Leonardo Basile, Lin M.W., Lupini A.R., Mahjouri-Samani M., Puretzky A.A., Rouleau C.M., Wang K., Xiao K., Yoon M.Fuentes:googlescopusPersistent photoconductivity in two-dimensional Mo<inf>1-x</inf>W<inf>x</inf>Se<inf>2</inf>-MoSe<inf>2</inf> van der Waals heterojunctions
ArticleAbstract: Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers oPalabras claves:crystal, Optoelectronic, photoconductivityAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:scopusIsoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation
ArticleAbstract:Palabras claves:alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctionsAutores:Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:googlescopus