Documentos de Wang K. | REDI

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Origen: "google"

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Advanced Materials(1)

Nature Communications(1)

Área temáticas

Cristalografía(2)

Ingeniería y operaciones afines(2)

Física aplicada(1)

Química física(1)

Área de conocimiento

Ciencia de materiales(3)

Nanostructura(1)

Semiconductor(1)

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Palabras Claves

Mo W Se 1- x x 2(1)

Transition metal dichalcogenides(1)

carrier type modulation(1)

first-principles calculations(1)

Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations

Abstract: The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determi

Palabras claves:

first-principles calculations, low-frequency Raman spectroscopy, stacking configurations, Transition metal dichalcogenides, two-dimensional materials

Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Liang L., Mahjouri-Samani M., Meunier V., Puretzky A.A., Sumpter B.G., Wang K., Xiao K.

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

Abstract: The formation of semiconductor heterojunctions and their high-density integration are foundations of

Palabras claves:

Boulesbaa A., Geohegan D.B., Ivanov I.N., Lee J., Leonardo Basile, Lin M.W., Lupini A.R., Mahjouri-Samani M., Puretzky A.A., Rouleau C.M., Wang K., Xiao K., Yoon M.

Isoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation

Palabras claves:

alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctions

Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.