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2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings(1)
IEEE Transactions on Circuits and Systems II: Express Briefs(1)
IEEE Transactions on Electron Devices(1)
PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings(1)
Solid-State Electronics(1)
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scopus(5)
A Robust, High-Speed and Energy-Efficient Ultralow-Voltage Level Shifter
ArticleAbstract: This brief presents a robust level shifter design able to convert input voltages from the deep sub-TPalabras claves:current mirror (CM), energy-efficient, level shifter, ultralow-voltageAutores:Alioto M., Crupi F., Fassio L., Lin L., Marco Lanuzza, Rose R.D., Settino F.Fuentes:scopusA virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters
Conference ObjectAbstract: In this paper, a III-V nanowire TFET technology platform is compared against the pbkp_redictive techPalabras claves:comparator, hybrid design, level shifter, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Settino F., Strangio S.Fuentes:scopusDigital and analog TFET circuits: Design and benchmark
ReviewAbstract: In this work, we investigate by means of simulations the performance of basic digital, analog, and mPalabras claves:Analog circuits, digital circuits, Simulation, TCAD, Tunnel-FETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusUnderstanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits
ArticleAbstract: In this paper, the analog/mixed-signal performance is evaluated at device and circuit levels for a IPalabras claves:Analog circuits, Analog figures of merit, Comparators, Track and hold (T/H), tunnel FET (TFET)Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusSimulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs
Conference ObjectAbstract: In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-To-band tunneling (BTBTPalabras claves:Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Settino F., Strangio S.Fuentes:scopus