A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters

Abstract:

In this paper, a III-V nanowire TFET technology platform is compared against the pbkp_redictive technology models of FinFETs at 10 nm node by evaluating the performance of two different comparator topologies. Furthermore, the potential of a hybrid FinFET/TFET approach in multi supply voltage design is addressed by considering level shifter circuits. Both analyses confirm that III-V TFET represents a promising technology option for future integrated circuits with sub-0.4 V operation.

Año de publicación:

2017

Keywords:

• hybrid design
• comparator
• TFET
• level shifter

Fuente:

scopus