Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior

Conference Object

Abstract: A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements, i

Palabras claves:

Circuit modeling, FETs, Microwave devices, pulsed measurements, Scattering parameters

Autores:

Brady R., Brazil T.J., Guillermo Rafael-Valdivia

Fuentes:

scopus