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Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior

Abstract:

A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements, is presented. Both DC and pulsed I/V characteristics of these devices are modeled using a single function derived from an existing and well-established MESFET/HEMT nonlinear static current model. The robust methodology in this work can be applied to other current models and subsequently implemented into a new large-signal circuit as a single current source, capable of accurately pbkp_redicting both static and small-signal performance of FET devices. © 2006 IEEE.