Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior
Abstract:
A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements, is presented. Both DC and pulsed I/V characteristics of these devices are modeled using a single function derived from an existing and well-established MESFET/HEMT nonlinear static current model. The robust methodology in this work can be applied to other current models and subsequently implemented into a new large-signal circuit as a single current source, capable of accurately predicting both static and small-signal performance of FET devices. © 2006 IEEE.
Año de publicación:
2006
Keywords:
- Microwave devices
- FETs
- Scattering parameters
- Circuit modeling
- pulsed measurements
Fuente:
scopusTipo de documento:
Conference Object
Estado:
Acceso restringido
Áreas de conocimiento:
- Ingeniería electrónica
- Ingeniería electrónica
- Semiconductor
Áreas temáticas de Dewey:
- Física aplicada
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- ODS 17: Alianzas para lograr los objetivos
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