Evaluation of the sensitivity of a COTS 90-nm SRAM memory at low bias voltage

Conference Object

Abstract: This paper presents an experimental study of the sensitivity to 14-MeV neutrons to low bias voltage

Palabras claves:

Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, SRAM

Autores:

Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Velazco R.

Fuentes:

scopus