Evaluation of the sensitivity of a COTS 90-nm SRAM memory at low bias voltage

Abstract:

This paper presents an experimental study of the sensitivity to 14-MeV neutrons to low bias voltage of a COTS 90-nm Cypress SRAM. Experiments involving power supplies ranging from 0.5V to 3.3V are presented and discussed. These results have also been compared with cross-section and SER theoretical pbkp_redictions.

Año de publicación:

2016

Keywords:

• reliability
• radiation hardness
• Cots
• low-bias voltage
• neutron tests
• SRAM
• Soft error

Fuente:

scopus