Mostrando 3 resultados de: 3
Filtros aplicados
Publisher
2010 14th International Workshop on Computational Electronics, IWCE 2010(1)
Journal of Applied Physics(1)
Physical Review B - Condensed Matter and Materials Physics(1)
Área de conocimiento
Nanostructura(2)
Ciencia de materiales(1)
Ingeniería electrónica(1)
Mecánica cuántica(1)
Simulación por computadora(1)
Origen
scopus(3)
Gap narrowing in charged and doped silicon nanoclusters
ArticleAbstract: The gap narrowing in charged Si35 H36 and n -type doped Si34 D H36 (D=P, As, Sb, S, Se, and Te) clusPalabras claves:Autores:Kulatov E., Laurent Raymond, Michelini F., Titov A., Uspenskii Y.A.Fuentes:scopusSingle donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
ArticleAbstract: This work presents a theoretical study of the influence of a single donor on the transport propertiePalabras claves:Autores:Bescond M., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k.p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity
Conference ObjectAbstract: We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowirPalabras claves:Acceptor, Hole, Impurity, k.p method, Nanowire, Quantum, Resonant interferences, transportAutores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopus