Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors

Article

Abstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we co

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Autores:

Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.

Fuentes:

scopus