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Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors

Abstract:

Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we compare current characteristics of Si, Ge, and GaAs p-type double-gate transistors. Electronic properties are analyzed as a function of (i) transport orientation, (ii) channel material, and (iii) gate length. We first show that 〈100〉-oriented devices offer better characteristics than their 110-counterparts independently of the material choice. Our results also point out that the weaker impact of scattering in Ge produces better electrical performances in long devices, while the moderate tunneling effect makes Si more advantageous in ultimately scaled transistors. Moreover, GaAs-based devices are less advantageous for shorter lengths and do not offer a high enough ON current for longer gate lengths. According to our simulations, the performance switching between Si and Ge occurs for a gate length of 12 nm. The conclusions of the study invite then to consider 100-oriented double-gate devices with Si for gate length shorter than 12 nm and Ge otherwise. © 2013 AIP Publishing LLC.