Mostrando 10 resultados de: 46
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2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019(4)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(3)
ETCM 2021 - 5th Ecuador Technical Chapters Meeting(3)
Electronics (Switzerland)(3)
International Journal of Quantum Chemistry(3)
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Hardware implementation of a shape recognition algorithm based on invariant moments
Conference ObjectAbstract: The present work shows the description of a simple fast shape detection algorithm and its implementaPalabras claves:Digital image, Finite state machine, Fpga, Hu's moments, Image moments, Non-local means filter, Shape recognitionAutores:Juan Sebastian Romero, Luis Miguel Procel Moya, Raffaitin C.Fuentes:googlescopusHigh-Speed and Low-Energy Dual-Mode Logic based Single-Clack-Cycle Binary Comparator
Conference ObjectAbstract: This paper presents an energy-efficient single-clock-cycle binary Dual-Mode Logic (DML)-based comparPalabras claves:arithmetic circuits, binary comparator, CMOS, Dual-mode logicAutores:Luis Miguel Procel Moya, Marco Lanuzza, Ramiro Taco, Ricardo Escobar, Trojman L.Fuentes:scopusHydrogen impurity in SrTiO<inf>3</inf>: Structure, electronic properties and migration
ArticleAbstract: The present paper reports a computational investigation of the geometry and electronic structure asPalabras claves:Autores:Barreto R., Luis Miguel Procel Moya, Luis Villamagua, Stashans A.Fuentes:googlescopusEnergy efficient self-adaptive dual mode logic address decoder
ArticleAbstract: This paper presents a 1024-bit self-adaptive memory address decoder based on Dual Mode Logic (DML) dPalabras claves:Address decoder, Controller, Dual mode logic, Self-adaptiveAutores:Ariana Musello, Cristhopher Mosquera, Esteban Garzón, Kevin Vicuña, Luis Miguel Procel Moya, Mateo Rendón, Ramiro Taco, Sara Benedictis, Trojman L.Fuentes:googlescopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusFabrication of Nanopores Using the Controlled Dielectric Breakdown Technique
Conference ObjectAbstract: Controlled dielectric breakdown is becoming the main solid-state nanopore fabrication technique worlPalabras claves:ACC, controlled dielectric breakdown, DAQ, DNA RNA sensor, fluidic cell, leakage current, Silicon nitride, solid-state nanopores, transmembraneAutores:Amaguayo N., Ariana Musello, José A. Bustamante, Luis Miguel Procel Moya, Pablo Lopez, Trojman L.Fuentes:scopusFrom 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusEffects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations
Conference ObjectAbstract: In this paper, the effect on the performances of the technology scaling down to 28nm (bulk and planaPalabras claves:28nm, 90nm, Feed Forward rejection, OTA, PDK, Pseudo Differential Pair, TCAD simulation, Ultra-low power, Ultra-low voltageAutores:André Borja, Juan Orozco, Luis Miguel Procel Moya, Mateo Bonilla, Mateo Valencia, Ramiro Taco, Trojman L.Fuentes:scopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopus