Mostrando 9 resultados de: 9
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IEEE Transactions on Electron Devices(2)
Proceedings of the LACCEI international Multi-conference for Engineering, Education and Technology(2)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
IEEE International Reliability Physics Symposium Proceedings(1)
IEEE Transactions on Device and Materials Reliability(1)
Design and construction of an automatic system of ferroelectric ceramics polarization
Conference ObjectAbstract: This work shows the design and construction of an automatic polarizer for ferroelectric ceramics,guaPalabras claves:Automation, ceramics, Energy converters, Ferroelectricity, PI Controller, PolarizationAutores:Cristian Tasiguano, D. Romo, Eliana Acurio, Luis LascanoFuentes:googlescopusDesign and implementation of an automatic system for dielectric characterization of ceramic materials
Conference ObjectAbstract: This article describes the design and implementation of an automatic dielectric characterization sysPalabras claves:ceramic, Complex impedance, Dielectric Constant, LabVIEW, PidAutores:Cristian Tasiguano, Eliana Acurio, F. Narváez, Luis Lascano, S. ValladaresFuentes:googlescopusON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Conference ObjectAbstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-statePalabras claves:de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rateAutores:Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.Fuentes:googlescopusInfluence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusReliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopusReliability Study on Diodes Based on AlGaN/GaN During the On State
ArticleAbstract: This work aims to study the degradation of Schottky Barrier Diodes (SBD) with a gated edge terminatiPalabras claves:AlGaN/GaN, diodes, INTRINSIC, reliability, Schottky barrierAutores:Bakeroot B., De Jaeger B., Eliana Acurio, Trojman L.Fuentes:googlescopusReliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination
ArticleAbstract: This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gPalabras claves:AlGaN/GaN Schottky diode, gated edge termination (GET), hard breakdown, intrinsic failures, off-state, reliability, Weibull distributionAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus