Mostrando 10 resultados de: 15
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Proceedings of the LACCEI international Multi-conference for Engineering, Education and Technology(3)
IEEE Transactions on Electron Devices(2)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings(1)
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021(1)
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BTI saturation and universal relaxation in SiC power MOSFETs
ArticleAbstract: This work focuses on the positive bias temperature instability of SiC-based MOSFETs under differentPalabras claves:de-trapping, PBTI, recovery, SiC, TRAPPING, Universal relaxation, Zafar's modelAutores:Crupi F., Eliana Acurio, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopusController design for high-energy-efficient performance of a household refrigerator using inverter technology
Conference ObjectAbstract: This work presents the control design of a domestic refrigeration system by using a variable speed cPalabras claves:BLDC, High efficiency, Inverter technology, Refrigeration, Speed controllerAutores:Cristian Tasiguano, Eliana Acurio, F. Hermosa, Marcelo PozoFuentes:googlescopusDesign and construction of an automatic system of ferroelectric ceramics polarization
Conference ObjectAbstract: This work shows the design and construction of an automatic polarizer for ferroelectric ceramics,guaPalabras claves:Automation, ceramics, Energy converters, Ferroelectricity, PI Controller, PolarizationAutores:Cristian Tasiguano, D. Romo, Eliana Acurio, Luis LascanoFuentes:googlescopusDesign and implementation of an automatic system for dielectric characterization of ceramic materials
Conference ObjectAbstract: This article describes the design and implementation of an automatic dielectric characterization sysPalabras claves:ceramic, Complex impedance, Dielectric Constant, LabVIEW, PidAutores:Cristian Tasiguano, Eliana Acurio, F. Narváez, Luis Lascano, S. ValladaresFuentes:googlescopusON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Conference ObjectAbstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-statePalabras claves:de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rateAutores:Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.Fuentes:googlescopusHearing Health Virtual Assessment Through Association Rules Mining Inside a College Community
Conference ObjectAbstract: This study quantified possible cases of hearing loss and determined possible causes through associatPalabras claves:Association Rules, audiometry, ECUADOR, hearing loss, Optical Character RecognitionAutores:Eliana Acurio, Hernan Barba Molina, María Isabel Subía, Rubén Alejandro OrtizFuentes:scopusOn recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusInfluence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusMicroprocessor Design with a Direct Bluetooth Connection in 45 nm Technology Using Microwind
Conference ObjectAbstract: This paper presents the full-custom design of a 45 nm microprocessor using the electronic design autPalabras claves:45nm, Arithmetic Logic Unit (ALU), Bluetooth (BT), MEMORY, Microprocessor, Microwind, PVT, Radio frequency (RF)Autores:Carlos Macias, Diego Jaramillo, Eliana Acurio, Esteban Garzón, Felix Chavez, Luis Miguel Prócel Moya, Sánchez Luis, Sicard E., Sofia Lara, Trojman L.Fuentes:googlescopus