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Atomic imaging and spectroscopy of two-dimensional materials
Conference ObjectAbstract:Palabras claves:Autores:Idrobo J.C., Kapetanakis M., Leonardo Basile, Pantelides S.T., Pennycook S.J., Prange M.P., Zhou W.Fuentes:googlescopusControllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
ArticleAbstract: Layered materials are an actively pursued area of research for realizing highly scaled technologiesPalabras claves:Mo, molecular beam epitaxy (MBE), TeAutores:Azcatl A., Furdyna J., Idrobo J.C., Jena D., Kim M., Leonardo Basile, Liu X., Lu N., Magno K., Rouvimov S., Vishwanath S., Wallace R., Xing H.Fuentes:googlescopusHeteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges
ArticleAbstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-lPalabras claves:Autores:Clark K., Deng W., Gu G., Idrobo J.C., Leonardo Basile, Li A.P., Liu L., McCarty K., Park J., Siegel D.Fuentes:googlescopusEngineering single-atom dynamics with electron irradiation
ArticleAbstract: Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atomPalabras claves:Autores:Dong M., Hofer C., Idrobo J.C., Kong J., Kotakoski J., Leonardo Basile, Li J., Meyer J.C., Su C., Su G., Susi T., Tripathi M., Wang H., Wang Z., Yan Q.B., Zhang Z.Fuentes:googlescopusImaging and spectroscopy of graphene/hexagonal boron nitride lateral heterostructure interfaces
Conference ObjectAbstract:Palabras claves:Autores:Gu G., Idrobo J.C., Leonardo Basile, Liu L.Fuentes:googlescopusIsoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation
ArticleAbstract:Palabras claves:alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctionsAutores:Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:googlescopusSurface x-ray-diffraction study and quantum well analysis of the growth and atomic-layer structure of ultrathin PbSi(111) films
ArticleAbstract: We present surface x-ray-diffraction results from Pb films grown on pretreated Si(111) substrates atPalabras claves:Autores:Chiang T.C., Czoschke P., Hong H., Leonardo BasileFuentes:googlescopusMonochromatic STEM-EELS for correlating the atomic structure and optical properties of two-dimensional materials
Conference ObjectAbstract:Palabras claves:Autores:Aoki T., Carpenter R., Dellby N., Idrobo J.C., Krivanek O.L., Leonardo Basile, Mardinly J., Pennycook S.J., Salafranca J., Zhou W.Fuentes:googlescopusSelf-organization of Pb islands on Si(111) caused by quantum size effects
ArticleAbstract: Growth of metallic Pb islands on Si(111) by vacuum deposition was studied in real time using synchroPalabras claves:Autores:Chiang T.C., Czoschke P., Gray A., Hong H., Leonardo BasileFuentes:googlescopusVan der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene
ArticleAbstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured maPalabras claves:Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxyAutores:Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.Fuentes:googlescopus