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Non-linear model for microwave transistors including low-frequency dispersion and memory effects
Conference ObjectAbstract: A new methodology for the extraction of nonlinear models for microwave transistors is proposed. A unPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusThe Second IEEE MTT-S Latin America Microwave Conference [Conference Report]
Conference ObjectAbstract:Palabras claves:Autores:Guillermo Rafael-Valdivia, Rayas-Sanchez J.E.Fuentes:scopus