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Device level model for trapping effects in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: In this work, we propose a new non-linear equivalent circuit which is able to model the low frequencPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusAnalysis of sound propagation for outdoor emergency speakers networks
Conference ObjectAbstract: In this work we show the results of analysis of propagation of sound waves applied for an alert systPalabras claves:Autores:Guillermo Rafael-Valdivia, Paucar-Curasma R., Rosas-Bermejo E.Fuentes:scopusImpact of the substrate characterization process on the implementation of a 3.5 GHz amplifier
ArticleAbstract: In this article it is presented the impact of the one-port substrate characterization technique on tPalabras claves:Dielectric Constant, microwaves, Permittivity, Substrate characterization, telecommunicationsAutores:Guillermo Rafael-ValdiviaFuentes:scopusDesign of a Doherty Power Amplifier with GaN Technology in the Sub-6 GHz Band for 5G Applications with Harmonic Suppression
Conference ObjectAbstract: This paper shows the methodology for the design of a Doherty Power Amplifier (DPA), based on a wellPalabras claves:Doherty amplifier, GaN, Harmonic suppression, ModelingAutores:Aruquipa-Callata L., Guillermo Rafael-ValdiviaFuentes:scopusForeword
OtherAbstract:Palabras claves:Autores:Abraho S., Annosi M.C., Baldassarri S., Begin T., Berenbach B., Berry D., Bill Curtis, Blanco C., Champneys A., Claudio A. Cañizares, Conejo B.A.J., Conradi R., Creighton O., Curtis B., Damian D., de la Cruz Llopis L.J., Del Azuay U., Doerr J., Dunghana D., Ebert C., Eslamian S., Fenwick A.J., Ferrari R., Franch X., Fraser S., Furze J.N., Gallardo J., Genero M., Gómez-Expósito A., Gregory A. Lewbart, Gruenbacher P., Guillermo Casado-López, Guillermo Rafael-Valdivia, Hall M.L., Hernandez S., Holban A.M., Houdek F., Hulgan J., Jefferson Torres-Quezada, Jeffery R., Johnson J.B., Jon Whittle, José Manuel Saiz-Alvarez, Juan Pablo Carvallo, Jürjens J., Kelly Swing, Lacuesta-Gilaberte R., LePennec J.L., Li Z., Luis Enrique Sánchez Crespo, Lutz R., Madhavji N.H., Männistö T., Marcia Martins Marques, Marian Wiercigroch, Mavin A., Mellado D., Miranskyy A., Mohagheghi P., Mónica Aguilar Igartua, Mónica Cartelle Gestal, Murtaza S., Natalia Juristo, Oliver Creighton, Pablo Samaniego Ponce, Perry D., Porter A., Raafat S.M., Regnell B., Reyes A., Richard J. Aspinall, Rosado D.G., Schwanke R., Seaman C., Sergio Albiol-Pérez, Sergio Luján-Mora, Steven Fraser, Tamai T., Terzakis J., Tetsuo Tamai, Torchiano M., Trujillo S., Votta L., Walter Mera Ortiz, Whittle J., Wieringa R., Wilma FreireFuentes:orcidscopusMeasurement of mobility in HEMT devices using high-order derivatives
ArticleAbstract: In this paper, a novel approach to the measurement of mobility of GaAs HEMT devices is presented. ThPalabras claves:HEMTs, Intermodulation distortion, MESFETs, Microwave measurements, mobility, ModelingAutores:Fernández Ibáñez T., Guillermo Rafael-Valdivia, Mediavilla Sánchez A., Rodriguez-Tellez J., Tazón Puente A.Fuentes:scopusMethodology for modelling, design and implementation of RF power amplifiers based on pulsed measurements
Conference ObjectAbstract: This work presents a new methodology for modelling, design and implementation of power amplifiers inPalabras claves:Circuit modelling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusMicrowave Transistor Model Including Electronic Mobility Prediction
Conference ObjectAbstract: This work presents a methodology for modeling microwave transistors in different technologies. As rePalabras claves:Circuit modeling, FETs, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-ValdiviaFuentes:scopusModeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The tecPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusLarge-signal FET modeling based on pulsed measurements
Conference ObjectAbstract: The new FET model presented in this paper highlights a method through which complex current flow dynPalabras claves:FETs, Intermodulation distortion, MESFETs, Nonlinear circuits, Power amplifiers, Scattering parametersAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopus