Mostrando 10 resultados de: 22
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IEEE MTT-S International Microwave Symposium Digest(3)
2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020(2)
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2014 IEEE Latin-America Conference on Communications, IEEE LATINCOM 2014(1)
2015 IEEE MTT-S International Microwave Symposium, IMS 2015(1)
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scopus(22)
Analysis of sound propagation for outdoor emergency speakers networks
Conference ObjectAbstract: In this work we show the results of analysis of propagation of sound waves applied for an alert systPalabras claves:Autores:Guillermo Rafael-Valdivia, Paucar-Curasma R., Rosas-Bermejo E.Fuentes:scopusDevice level model for trapping effects in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: In this work, we propose a new non-linear equivalent circuit which is able to model the low frequencPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusDesign of a Doherty Power Amplifier with GaN Technology in the Sub-6 GHz Band for 5G Applications with Harmonic Suppression
Conference ObjectAbstract: This paper shows the methodology for the design of a Doherty Power Amplifier (DPA), based on a wellPalabras claves:Doherty amplifier, GaN, Harmonic suppression, ModelingAutores:Aruquipa-Callata L., Guillermo Rafael-ValdiviaFuentes:scopusForeword
OtherAbstract:Palabras claves:Autores:Abraho S., Annosi M.C., Baldassarri S., Begin T., Berenbach B., Berry D., Blanco C., Champneys A., Claudio A. Cañizares, Conejo B.A.J., Conradi R., Creighton O., Curtis B., Damian D., de la Cruz Llopis L.J., Del Azuay U., Doerr J., Dunghana D., Ebert C., Eslamian S., Fenwick A.J., Ferrari R., Franch X., Fraser S., Furze J.N., Gallardo J., Genero M., Gómez-Expósito A., Gregory A. Lewbart, Gruenbacher P., Guillermo Casado-López, Guillermo Rafael-Valdivia, Hall M.L., Hernandez S., Holban A.M., Houdek F., Hulgan J., Jefferson Torres-Quezada, Jeffery R., Johnson J.B., José Manuel Saiz-Alvarez, Juan Pablo Carvallo Vega, Jürjens J., Kelly Swing, Lacuesta-Gilaberte R., LePennec J.L., Li Z., Luis Enrique Sánchez Crespo, Lutz R., Madhavji N.H., Männistö T., Marcia Martins Marques, Marian Wiercigroch, Mavin A., Mellado D., Miranskyy A., Mohagheghi P., Mónica Aguilar Igartua, Mónica Cartelle Gestal, Murtaza S., Natalia Juristo, Pablo Samaniego Ponce, Perry D., Porter A., Raafat S.M., Regnell B., Reyes A., Richard J. Aspinall, Rosado D.G., Schwanke R., Seaman C., Sergio Albiol-Pérez, Sergio Luján-Mora, Tamai T., Terzakis J., Torchiano M., Trujillo S., Votta L., Walter Mera Ortiz, Whittle J., Wieringa R., Wilma FreireFuentes:scopusNew drain current model for MESFET/HEMT devices based on pulsed measurements
Conference ObjectAbstract: In this work, a new ids current equation and FET model are proposed based on DC and pulsed I/V measuPalabras claves:Circuit modeling, FET circuits, MESFETs, Microwave devices, pulsed measurements, Scattering parameter measurementAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopusNew methodology for modeling, design and implementation of RF power amplifiers
ArticleAbstract: This work presents a new methodology for modeling, design and implementation of power amplifiers inPalabras claves:microwaves, Modeling, Power Amplifier, SubstrateAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusNew technique for the implementation of nonlinear models for microwave transistors for broadband data communication
Conference ObjectAbstract: A new way to implement nonlinear models for microwave transistors is shown. It allows conventional dPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Su Z.Fuentes:scopusNon Linear Modeling for the Frequency Dispersive Effects and Electronic Mobility on Microwave Transistors
Conference ObjectAbstract: Differences between static and dynamic behavior of microwave transistors have been studied through dPalabras claves:electronic mobility, GAAS, GaN, Intermodulation distortion, Microwave transistors, Modeling, non linear equivalent circuitsAutores:Guillermo Rafael-ValdiviaFuentes:scopusNon-linear model for microwave transistors including low-frequency dispersion and memory effects
Conference ObjectAbstract: A new methodology for the extraction of nonlinear models for microwave transistors is proposed. A unPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusNon-linear modeling for low and high power microwave transistors.
Conference ObjectAbstract: An improved way to implement nonlinear models for microwave transistors is shown for GaAs, GaN and LPalabras claves:Device level modeling, GAAS, GaN, LDMOS, Microwave transistors, pulsed measurements, Trapping effectsAutores:Guillermo Rafael-Valdivia, Su Z.Fuentes:scopus