Device level model for trapping effects in GaN and GaAs devices for broadband data communication

Abstract:

In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.

Año de publicación:

2015

Keywords:

• Microwave devices
• Circuit modeling
• memory effects
• Scattering parameters
• pulsed measurements
• FETs

Fuente:

scopus