Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication

Abstract:

A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.

Año de publicación:

2014

Keywords:

• memory effects
• Microwave devices
• Circuit modeling
• pulsed measurements
• Scattering parameters
• FETs

Fuente:

scopus