Non-linear model for microwave transistors including low-frequency dispersion and memory effects

Conference Object

Abstract: A new methodology for the extraction of nonlinear models for microwave transistors is proposed. A un

Palabras claves:

Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parameters

Autores:

Guillermo Rafael-Valdivia, O. Castellanos

Fuentes:

scopus