Measurement of mobility in HEMT devices using high-order derivatives

Article

Abstract: In this paper, a novel approach to the measurement of mobility of GaAs HEMT devices is presented. Th

Palabras claves:

HEMTs, Intermodulation distortion, MESFETs, Microwave measurements, mobility, Modeling

Autores:

Fernández Ibáñez T., Guillermo Rafael-Valdivia, Mediavilla Sánchez A., Rodriguez-Tellez J., Tazón Puente A.

Fuentes:

scopus