Mostrando 10 resultados de: 74
Filtros aplicados
Publisher
International Journal of Circuit Theory and Applications(8)
IEEE Transactions on Circuits and Systems II: Express Briefs(6)
Proceedings - IEEE International Symposium on Circuits and Systems(6)
Solid-State Electronics(6)
Electronics (Switzerland)(4)
Área temáticas
Física aplicada(56)
Ciencias de la computación(22)
Ingeniería y operaciones afines(3)
Instrumentos de precisión y otros dispositivos(3)
Dibujo técnico, materiales peligrosos(1)
Área de conocimiento
Arquitectura de computadoras(6)
Energía(6)
Ciencias de la computación(5)
Simulación por computadora(4)
Ciencia de materiales(3)
Origen
scopus(74)
Assessment of 2D-FET Based Digital and Analog Circuits on Paper
ArticleAbstract: Two-dimensional (2D) materials represent an emerging technology for transistor electronics in view oPalabras claves:2d materials, Field-Effect Transistor (FET), Molybdenum disulfide (MoS ) 2, Paper electronics, Verilog-A modelAutores:Crupi F., Iannaccone G., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusAssessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
ArticleAbstract: In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual techPalabras claves:full-Adder, III-V, tunnel field effect transistor (TFET), very large scale integration (VLSI).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusAssessment of paper-based MoS<inf>2</inf> FET for Physically Unclonable Functions
ArticleAbstract: Two-dimensional (2D) materials are recognized as a promising beyond-CMOS technology thanks to theirPalabras claves:2d materials, Hardware security, Molybdenum disulfide (MoS ) 2, Paper electronics, physically unclonable function (PUF), Verilog-A modelAutores:Conti S., Crupi F., Iannaccone G., Magnone P., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusBenchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
ArticleAbstract: In this work, a benchmark for low-power digital applications of a III-V TFET technology platform agaPalabras claves:Full adders, III-V, Ripple carry adders, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusAn efficient and low-cost design methodology to improve SRAM-Based FPGA robustness in space and avionics applications
Conference ObjectAbstract: This paper presents an efficient approach to protect an FPGA design against Single Event Upsets (SEUPalabras claves:Avionics, Fpga, Reconfigurable System, Single Event Upsets, spaceAutores:Corsonello P., Frustaci F., Marco Lanuzza, Perri S., Zicari P.Fuentes:scopusAn energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops
Conference ObjectAbstract: In this paper, we propose a variation-tolerant design methodology to embed self-write termination coPalabras claves:digital circuits, Energy efficiency, Non-volatile flip-flop, STT-MRAM, VLSI, Zero-leakage circuitsAutores:Alioto M., Crupi F., Marco Lanuzza, Rose R.D.Fuentes:scopusAnalyzing noise robustness of wide fan-in dynamic logic gates under process variations
ArticleAbstract: Wide fan-in dynamic logic gates are difficult to design due to the large number of leaky evaluationPalabras claves:Dynamic logic, process variations, wide fan-inAutores:Corsonello P., Frustaci F., Marco Lanuzza, Perri S.Fuentes:scopusAM<sup>4</sup>: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing
ArticleAbstract: In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-siPalabras claves:associative memories, associative processor, CAM, Double-barrier MTJ, emerging memories, MRAM, MTJ, Non-von Neumann computer architecture, TCAMAutores:Esteban Garzón, Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusA 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS
ArticleAbstract: In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for InterPalabras claves:CMOS-based temperature sensor, Low-power, Low-voltage, Real-time sensing, Ring oscillatorAutores:Benjamin Zambrano, Crupi F., Esteban Garzón, Marco Lanuzza, Strangio S.Fuentes:scopusA 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm<sup>2</sup> Area in 180nm
Conference ObjectAbstract: This work introduces a compact voltage reference operating at pW-power and 250-mV supply (e.g., direPalabras claves:Autores:Alioto M., Crupi F., Fassio L., Lin L., Marco Lanuzza, Rose R.D.Fuentes:scopus