An energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops

Abstract:

In this paper, we propose a variation-tolerant design methodology to embed self-write termination control in spin-transfer torque (STT) magnetic tunnel junction (MTJ)-based non-volatile flip-flops (NVFFs). Because unnecessary MTJ writing operations are completely avoided, the average backup time and energy are more than halved with respect to conventional NVFFs (i.e. without an embedded self-write termination mechanism) for a write failure rate of 10-12. Such benefits are obtained while maintaining low design complexity and without significantly affecting the active mode of operation.

Año de publicación:

2019

Keywords:

• digital circuits
• Energy efficiency
• Zero-leakage circuits
• Non-volatile flip-flop
• VLSI
• STT-MRAM

Fuente:

scopus