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scopus(6)
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusEmbedded memories for cryogenic applications
ArticleAbstract: The ever-growing interest in cryogenic applications has prompted the investigation for energy-efficiPalabras claves:77 K, Cold electronics, Cryogenic, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), Low-power, Magnetic tunnel junction (MTJ), SRAM, STT-MRAMAutores:Esteban Garzón, Marco Lanuzza, Teman A.Fuentes:scopusEvaluating the energy efficiency of stt-mrams based on perpendicular mtjs with double reference layers
Conference ObjectAbstract: This paper evaluates the energy efficiency of STT-MRAMs based on double-barrier MTJs (DMTJs) as compPalabras claves:Autores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D.Fuentes:scopusRelaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
ArticleAbstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidatePalabras claves:77 K, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopus