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Embedded memories for cryogenic applications
ArticleAbstract: The ever-growing interest in cryogenic applications has prompted the investigation for energy-efficiPalabras claves:77 K, Cold electronics, Cryogenic, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), Low-power, Magnetic tunnel junction (MTJ), SRAM, STT-MRAMAutores:Esteban Garzón, Marco Lanuzza, Teman A.Fuentes:scopusEnergy efficient self-adaptive dual mode logic address decoder
ArticleAbstract: This paper presents a 1024-bit self-adaptive memory address decoder based on Dual Mode Logic (DML) dPalabras claves:Address decoder, Controller, Dual mode logic, Self-adaptiveAutores:Ariana Musello, Cristhopher Mosquera, Esteban Garzón, Kevin Vicuña, Luis Miguel Prócel Moya, Mateo Rendón, Ramiro Taco, Sara Benedictis, Trojman L.Fuentes:googlescopusPerformance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective
ArticleAbstract: Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing thePalabras claves:characterization, FinFET, MSP-430, Standard cell library, Synthesis, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Esteban Garzón, Kevin Landázuri, Luis Miguel Prócel Moya, Mateo Rendón, Ramiro TacoFuentes:scopusUltralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications
ArticleAbstract: Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel juncPalabras claves:double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Tunnel-FET (TFET), Ultralow voltageAutores:Esteban Garzón, Marco Lanuzza, Ramiro Taco, Strangio S.Fuentes:scopus