Mostrando 3 resultados de: 3
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Publisher
Solid-State Electronics(2)
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022(1)
Área de conocimiento
Ciencia de materiales(1)
Ingeniería electrónica(1)
Modelo matemático(1)
Simulación por computadora(1)
Analysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO<inf>2</inf>-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopus