Analysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy

Conference Object

Abstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-

Palabras claves:

conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transition

Autores:

Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.

Fuentes:

google

scopus