On the parameter extraction of short channel UTBB-FDSOI FET's with high-κ metal gate and TCAD modelling

Conference Object

Abstract: In this work an extraction method is proposed to obtain the electric and physical parameters of Ultr

Palabras claves:

high-κ, modelling, MOSFET, Parameter extraction, parasitic components, short channel, TCAD, UTTB-FDSOI

Autores:

Andres Vaca, Luis Miguel Prócel Moya, Trojman L.

Fuentes:

scopus