Mostrando 4 resultados de: 4
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Publisher
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
ETCM 2021 - 5th Ecuador Technical Chapters Meeting(1)
Electronics (Switzerland)(1)
Assessment of 10 nm Tunnel-FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits
Conference ObjectAbstract: The trade-offs of the Tunnel-FETs (TFETs) in terms of delay, energy per cycle, and noise margin arePalabras claves:digital circuits, Energy-delay trade-off, FinFET, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Kevin Landázuri, Luis Miguel Prócel Moya, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusPerformance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective
ArticleAbstract: Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing thePalabras claves:characterization, FinFET, MSP-430, Standard cell library, Synthesis, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Esteban Garzón, Kevin Landázuri, Luis Miguel Prócel Moya, Mateo Rendón, Ramiro TacoFuentes:scopusVoltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories
Conference ObjectAbstract: This work presents energy advantages allowed by the technology and voltage scaling of spin-transferPalabras claves:double-barrier magnetic tunnel junction (DMTJ), Embedded memory, energy-efficient, FinFET, Low-voltage, STT-MRAMAutores:Esteban Garzón, Luis Miguel Prócel Moya, Marco Lanuzza, Ramiro Taco, Trojman L.Fuentes:scopus