Energy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells

Conference Object

Abstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at t

Palabras claves:

double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltage

Autores:

Ariana Musello, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.

Fuentes:

google

scopus