Mostrando 4 resultados de: 4
Publisher
2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020(1)
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021(1)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(1)
Electronics (Switzerland)(1)
Área temáticas
Física aplicada(4)
From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusOptimization of Active Voltage Rectifier / Doubler Designed in 90 nm Technology
Conference ObjectAbstract: This paper presents the optimization and comparison of three RF-to-DC circuit designs based on voltaPalabras claves:body biasing, Energy harvesters, Integrated circuit, Rectifier, RF-to-dc conversionAutores:David Rivadeneira, Luis Miguel Prócel Moya, Marco Villegas, Trojman L.Fuentes:googlescopusRF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies
Conference ObjectAbstract: In this work, we are studying the effect of the technology scaling for different full-wave rectifierPalabras claves:32nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:David Rivadeneira, Eliana Acurio, Luis Miguel Prócel Moya, Marco Lanuzza, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:scopus