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From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusOptimization of Active Voltage Rectifier / Doubler Designed in 90 nm Technology
Conference ObjectAbstract: This paper presents the optimization and comparison of three RF-to-DC circuit designs based on voltaPalabras claves:body biasing, Energy harvesters, Integrated circuit, Rectifier, RF-to-dc conversionAutores:David Rivadeneira, Luis Miguel Prócel Moya, Marco Villegas, Trojman L.Fuentes:googlescopusRF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies
Conference ObjectAbstract: In this work, we are studying the effect of the technology scaling for different full-wave rectifierPalabras claves:32nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:David Rivadeneira, Eliana Acurio, Luis Miguel Prócel Moya, Marco Lanuzza, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:scopus