Mostrando 4 resultados de: 4
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2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
Computational Materials Science(1)
Latin American Electron Devices Conference, LAEDC 2019(1)
Microelectronics Journal(1)
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Física aplicada(3)
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Ciencia de materiales(3)
Electroquímica(1)
Física(1)
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStress influence on substitutional impurity segregation on dislocation loops in IV-IV semiconductors
ArticleAbstract: The influence of stress on the distribution of slow-diffusing substitutional impurities in the vicinPalabras claves:Dislocation, Germanium, Segregation, silicon, SimulationAutores:Hoummada K., Laurent Raymond, Perrin Toinin J., Portavoce A., Tréglia G.Fuentes:scopusResistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters
Conference ObjectAbstract: In this work, a model for the resistive switching of ReRAM devices that considers the electrical sigPalabras claves:1T1R, active region, HRS, INTRINSIC, LRS, Model, RERAM, reset, resistive switching, series resistance, set, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopus