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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusA Palindromic half-line criterion for absence of eigenvalues and applications to substitution Hamiltonians
ArticleAbstract: We prove a criterion for absence of decaying solutions on the half-line for one-dimensional discretePalabras claves:Autores:Damanik D.D., Ghez J.M., Laurent RaymondFuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusComment on "spin correlations in the paramagnetic phase and ring exchange in La2CuO4"
OtherAbstract:Palabras claves:Autores:Albinet G., Laurent Raymond, Tremblay A.M.S.Fuentes:scopusBallistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusAnalysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusAnomalous quantum Hall effect induced by disorder in topological insulators
ArticleAbstract: We investigate a transition between a two-dimensional topological insulator conduction state, characPalabras claves:Autores:Demion A., Laurent Raymond, Verga A.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusArticle
ArticleAbstract: The kinetic roughening of growing epitaxial layers is investigated with a phenomenological stochastiPalabras claves:crystal growth, Nonlinear stochastic dynamics, Roughening transitionAutores:Laurent Raymond, Verga A., Vvedensky D.D.Fuentes:scopusDynamical photo-induced electronic properties of molecular junctions
ArticleAbstract: Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, nPalabras claves:Autores:Beltako K., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopus