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Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO<inf>x</inf>/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusRealizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO <inf>x</inf>/Poly-Si Passivating Contacts
ArticleAbstract: In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultPalabras claves:carrier-selective passivating contacts, hydrogen annealing, hydrogenated fluorine-doped indium oxide (IFO:H), transparent conductive oxide (TCO), ultrathin SiO /poly-Si passivating contacts xAutores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopus