New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies

Conference Object

Abstract: The purpose of this work is to point out the main differences between a Static Random-Access Memory

Palabras claves:

FinFET, Low voltage, SRAM memory, stability analysis, Static Noise Margins, Tunnel-FET

Autores:

Adriana Arevalo, Daniel Romero, Liautard R., Luis Miguel Prócel Moya, Trojman L.

Fuentes:

scopus