TFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range

Conference Object

Abstract: This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology for

Palabras claves:

CMOS, DELAY, FinFET, hybrid, Power consumption, SRAM, Static Noise Margin, TFET, Write Noise Margin

Autores:

Adriana Arevalo, Liautard R., Luis Miguel Prócel Moya, Trojman L.

Fuentes:

google

scopus