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2017 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2017(1)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
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Capacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique
Conference ObjectAbstract: This paper presents the description and the results obtained with a new RFCV system written on pythoPalabras claves:Parameter Analyzer, PYTHON, RFCV, Source Measure Unit, Vector Network AnalyzerAutores:DIego R. Benalcázar, Esteban Garzón, Trojman L.Fuentes:scopusMobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process
Conference ObjectAbstract: In this article, we study the mobility for short devices (down to 24-nm-channel length) using the RFPalabras claves:additional mobility, Halo, n-MOS, RFCV, short channel device, SION, Y-functionAutores:DIego R. Benalcázar, Jobard G., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus