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A simple method for reducing THD and improving the efficiency in CSI topology based on SiC power devices
ArticleAbstract: Silicon carbide (SiC)-based switching devices provide significant performance improvements in many aPalabras claves:Current source inverter (CSI), DC–AC converter, Power Converter, Silicon Carbide (SiC), total harmonic distortion (THD)Autores:Efrén Fernández Palomeque, Paredes-Camacho A., Romeral Martinez L., Sala V.Fuentes:scopusSystem of Diagnostic for SiC Devices in Power Converts by Analisys of Curves of Lissajous
Conference ObjectAbstract: this paper present the analysis and implementation of a systems of diagnostic by images based upon tPalabras claves:Equipment Failure, Failure analysis, Power Semiconductor, Silicon carbideAutores:Efrén Fernández Palomeque, S. Coello MateoFuentes:scopus