Mostrando 7 resultados de: 7
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Solid-State Electronics(2)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021(1)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(1)
Latin American Electron Devices Conference, LAEDC 2019(1)
Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Conference ObjectAbstract: The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the prinPalabras claves:energy harvester, FinFET, full-wave rectifier, planar CMOS, Tunnel-FETAutores:J. Paredes, Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusAdjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusDesign and optimization of a Vibrational MEMS-Based Energy Harvester
Conference ObjectAbstract: This paper describes the design of a Vibrational Energy Harvester (VEH) based on a microelectromechaPalabras claves:acceleration, MEMs, VEHAutores:Brenes A., Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Trojman L., Vladimirescu A.Fuentes:googlescopusVoltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories
Conference ObjectAbstract: This work presents energy advantages allowed by the technology and voltage scaling of spin-transferPalabras claves:double-barrier magnetic tunnel junction (DMTJ), Embedded memory, energy-efficient, FinFET, Low-voltage, STT-MRAMAutores:Esteban Garzón, Luis Miguel Prócel Moya, Marco Lanuzza, Ramiro Taco, Trojman L.Fuentes:scopusRF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies
Conference ObjectAbstract: In this work, we are studying the effect of the technology scaling for different full-wave rectifierPalabras claves:32nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:David Rivadeneira, Eliana Acurio, Luis Miguel Prócel Moya, Marco Lanuzza, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:scopusRelaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
ArticleAbstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidatePalabras claves:77 K, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus